Molecular Beam Epitaxy is the main growth technics of Ⅲ-Ⅴ and Ⅱ-Ⅵ compound semiconductors. Under the suitable substrate and situation, it grows the thin film along the direction of the substrate’s crystal axis by layers.
Beam source crucibles are required in MBE. And the crucibles must be featured with high-temperature resistance, high purity, long service life, etc. PBN is with all the specified features. That’s why it’s the best container for evaporating elements & chemical compounds in MBE.
Properties of PBN
| Property | Unit | Value | |
| Lattice constant | μm | a: 2.504 x 10^-10 c: 6.692 x 10^-10 | |
| Density | g/cm3 | 2.10-2.15 (PBN Crucible); 2.15-2.19 (PBN Plates) | |
| Micro hardness (Knoop)(ab side) | N/mm2 | 691.88 | |
| Resistivity | Ω*cm | 3.11 x 10^11 | |
| Tensile strength | N/mm2 | 153.86 | |
| Bending strength | ⊥C | N/mm2 | 243.63 |
| ⊥C | N/mm2 | 197.76 | |
| Elastic modulus | N/mm2 | 235690 | |
| Thermal conductivity | W/m*k | “a” direction “c” direction | |
| 200℃ | W/m*k | 60 2.60 | |
| 900℃ | W/m*k | 43.7 2.8 | |
| Dielectric strength (at room temperature) | KV/mm | 56 | |