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PBN Crucibles


Boron Nitride Ceramic

Product Category:

Customized Ceramic Components

Molecular Beam Epitaxy is the main growth technics of Ⅲ-Ⅴ and Ⅱ-Ⅵ compound semiconductors. Under the suitable substrate and situation, it grows the thin film along the direction of the substrate’s crystal axis by layers.

Molecular Beam Epitaxy

Beam source crucibles are required in MBE. And the crucibles must be featured with high-temperature resistance, high purity, long service life, etc. PBN is with all the specified features. That’s why it’s the best container for evaporating elements & chemical compounds in MBE.

PBN Crucibles

Properties of PBN

Property Unit Value
Lattice constant μm a: 2.504 x 10^-10   c: 6.692 x 10^-10
Density g/cm3 2.10-2.15 (PBN Crucible); 2.15-2.19 (PBN Plates)
Micro hardness (Knoop)(ab side) N/mm2 691.88
Resistivity Ω*cm 3.11 x 10^11
Tensile strength N/mm2 153.86
Bending strength ⊥C N/mm2 243.63
⊥C N/mm2 197.76
Elastic modulus N/mm2 235690
Thermal conductivity W/m*k “a” direction  “c” direction
200℃ W/m*k 60           2.60
900℃ W/m*k 43.7          2.8
Dielectric strength (at room temperature) KV/mm 56
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